Infineon IPD30N03S4L14ATMA1 30V N-Channel MOSFET for High-Efficiency Power Management

Modern power management systems demand semiconductor components that deliver high efficiency, thermal stability, and robust performance in increasingly compact designs. The Infineon IPD30N03S4L14ATMA1, a 30V N-Channel MOSFET, stands out as a critical component engineered to meet these challenges in a wide range of applications, from DC-DC converters and motor controls to load switching systems.

Built using Infineon’s advanced OptiMOS™ technology, this MOSFET is optimized for low voltage applications where minimizing power losses is a primary concern. A key feature contributing to its high efficiency is its exceptionally low on-state resistance (RDS(on)), which is typically just 1.4 mΩ at 10 V. This ultra-low resistance directly translates to reduced conduction losses, allowing more power to be delivered to the load with less energy wasted as heat.

Furthermore, the device boasts low gate charge (Qg). This characteristic is vital for high-frequency switching operations, commonly found in switch-mode power supplies (SMPS) and voltage regulation modules (VRMs). The low gate charge enables faster switching speeds and reduces driving losses, which contributes to higher overall system efficiency and allows for the use of smaller driver ICs and passive components.

The MOSFET is offered in a space-saving SuperSO8 package, which provides an excellent thermal footprint despite its small size. This makes it exceptionally suitable for power-dense modern electronics where board space is at a premium. The package’s superior thermal performance ensures reliable operation even under high-stress conditions, improving the longevity and reliability of the end product.

Designers will also appreciate the component’s enhanced avalanche ruggedness, which offers an additional layer of protection against voltage spikes and unpredictable transient events in automotive or industrial environments. This robustness makes it a reliable choice for systems that must operate with a high degree of reliability.

ICGOO Find Summary:

The Infineon IPD30N03S4L14ATMA1 is a high-performance N-Channel MOSFET that excels in boosting power conversion efficiency through its superior combination of ultra-low RDS(on) and low gate charge. Its compact packaging and strong thermal characteristics make it an ideal solution for space-constrained, high-efficiency power management designs across automotive, computing, and industrial sectors.

Keywords:

Power Management, Low RDS(on), High-Efficiency, N-Channel MOSFET, OptiMOS™ Technology