Infineon IPW65R099C6 CoolMOS™ Power Transistor: Key Features and Application Benefits

The relentless pursuit of higher efficiency, greater power density, and improved reliability in power electronics is a defining challenge for modern design engineers. Infineon Technologies addresses these demands head-on with the IPW65R099C6, a standout member of its renowned CoolMOS™ C6 superjunction (SJ) MOSFET family. This power transistor is engineered to set new benchmarks in performance for a wide array of switching power applications.

A primary highlight of the IPW65R099C6 is its exceptionally low figure-of-merit (R DS(on) x Q G). With a maximum drain-source on-state resistance (R DS(on)) of just 99 mΩ at a gate-source voltage of 10 V and an ultra-low gate charge (Q G), this device achieves an optimal balance between conduction and switching losses. This synergy is critical for operating at high switching frequencies, which allows for the use of smaller passive components like magnetics and capacitors. The result is a significant leap in system-level power density, enabling more compact and lighter end-products without sacrificing performance.

Furthermore, the integrated fast body diode enhances its robustness in hard-switching topologies, such as Power Factor Correction (PFC) circuits. This feature minimizes reverse recovery losses and associated stress, contributing to higher overall efficiency and more stable operation. The transistor's low effective output capacitance (E oss) further reduces turn-on losses, making it particularly advantageous for use in Quasi-Resonant (QR) and Zero Voltage Switching (ZVS) topologies like LLC converters.

The benefits of these features are realized across numerous applications. In server and telecom power supplies, the IPW65R099C6 enables designs that meet 80 Plus Titanium efficiency standards. For industrial motor drives and solar inverters, its high efficiency translates into reduced energy waste and improved thermal management, enhancing system longevity. It is also an ideal candidate for fast-charging adapters, where its high-frequency capability allows for dramatically smaller form factors.

ICGOOODFIND: The Infineon IPW65R099C6 CoolMOS™ C6 is a superior power MOSFET that delivers a winning combination of ultra-low switching and conduction losses, high-frequency operation, and robust integration. It is a key enabler for designers striving to achieve unprecedented levels of efficiency and power density in modern AC-DC and DC-DC conversion systems.

Keywords: CoolMOS™ C6, High Efficiency, Power Density, Low R DS(on), Fast Switching