Infineon BCR112E6327HTSA1: NPN Digital Transistor for Low-Power Switching and Amplification

Release date:2025-10-29 Number of clicks:95

Infineon BCR112E6327HTSA1: NPN Digital Transistor for Low-Power Switching and Amplification

The Infineon BCR112E6327HTSA1 is a highly integrated digital transistor that combines a bias resistor network with a small-signal NPN bipolar junction transistor (BJT). This integration is designed to simplify circuit design, reduce component count, and save valuable board space, making it an ideal solution for a wide array of low-power applications.

At its core, this device functions as a monolithic integrated structure. It incorporates two resistors; one is connected in series with the base (R1 = 10 kΩ) to limit the base current, and the other is connected between the base and emitter (R2 = 10 kΩ) to ensure proper off-state conditions by leaking away any stray currents. This built-in network allows the BCR112 to be driven directly from a microcontroller or other digital logic output (typically 3.3V or 5V) without requiring external current-limiting resistors. This not only streamlines the design process but also enhances the reliability and robustness of the final application.

The primary function of the BCR112 is low-power switching. It is exceptionally well-suited for driving loads such as LEDs, relays, solenoids, and lamps within its specified power and current limits (a continuous collector current of 100 mA and a collector-emitter voltage of 50 V). Its fast switching speed ensures efficient performance in interface circuits, indicator lamp drivers, and as a buffer for input/output ports.

Furthermore, the transistor is capable of serving in amplification roles. It can be used in small-signal amplification stages for audio pre-amplification or sensor signal conditioning, where its built-in resistors provide a stable operating point. The device is characterized by its high current gain, which is typically around 240, ensuring sufficient output for controlling other components from a minimal input signal.

Housed in a compact, surface-mountable SOT-23 package, the BCR112E6327HTSA1 is tailored for modern, space-constrained electronic designs. Its low saturation voltage ensures minimal power loss during operation, contributing to higher overall system efficiency. Infineon's commitment to quality ensures that this component offers excellent performance and durability for consumer electronics, industrial control systems, and automotive applications.

ICGOOFind: The Infineon BCR112E6327HTSA1 is an efficient and space-saving solution that simplifies digital circuit design. By integrating bias resistors onto a single silicon chip, it provides designers with a reliable, robust, and cost-effective component for switching and amplifying low-power signals, directly interfacing with microcontrollers to drive various loads.

Keywords: Digital Transistor, Low-Power Switching, Signal Amplification, SOT-23 Package, Microcontroller Interface.

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