Infineon AUIRS1170STR: Powering Next-Generation High-Voltage Switching Applications
The relentless advancement in power electronics demands robust and intelligent components that can handle increasingly demanding environments. At the heart of many high-performance systems, from industrial motor controls to advanced switch-mode power supplies (SMPS), lies the high-side gate driver. The Infineon AUIRS1170STR stands out as a premier solution, engineered to deliver exceptional performance and reliability in high-voltage applications.
This gate driver IC is specifically designed to drive N-channel power MOSFETs and IGBTs in a high-side configuration, where the switching element is connected to a floating supply rail that can be hundreds of volts above ground. The AUIRS1170STR excels in this challenging role, integrating a range of features that simplify design and enhance system robustness.
A core strength of this IC is its robust 1200V rated voltage capability. This high voltage rating provides a significant safety margin, ensuring stable operation and protecting the driver and subsequent power stage from voltage spikes and transients that are common in inductive load circuits, such as those found in motor drives. This inherent ruggedness makes it an ideal choice for harsh industrial environments.
Furthermore, the device incorporates advanced level-shift technology to efficiently translate the low-voltage logic input signal from a microcontroller (MCU) into the high-voltage gate drive output required to switch the power transistor. This internal circuitry is designed for high noise immunity, minimizing the risk of catastrophic shoot-through caused by false triggering. Complementing this is a built-in under-voltage lockout (UVLO) protection feature for both the high-side and low-side sections. This safeguard ensures the power switch is only driven when the gate voltage is sufficient for optimal operation, preventing inefficient and dangerous operation in the linear region, which reduces switching losses and prevents thermal runaway.
The output stage of the AUIRS1170STR is capable of delivering peak currents of up to 1.0A source and 1.8A sink. This strong drive capability ensures swift turn-on and, more critically, very fast turn-off of the power switch. Rapid switching is essential for minimizing switching losses and improving overall system efficiency, but it must be balanced with EMI considerations. The driver's adjustable switching speed allows designers to find this perfect balance for their specific application.
Housed in a compact yet thermally efficient SO-8 package, the AUIRS1170STR offers a compelling blend of power and integration, reducing the need for numerous external components and saving valuable board space. Its comprehensive protection suite and high noise immunity ensure that designs are not only efficient but also exceptionally reliable and long-lasting.
The Infineon AUIRS1170STR is a high-performance, high-voltage gate driver that provides designers with a robust, integrated, and reliable solution for demanding high-side switching applications. Its combination of a 1200V rating, strong drive current, and critical protective features makes it an excellent choice for enhancing the efficiency and durability of motor drives, power supplies, and inverters.
Keywords:
High-Side Gate Driver
1200V Rating
Robust Performance
UVLO Protection
Level-Shift Technology
