Infineon IPD350N06LG: High-Performance Automotive MOSFET for Advanced Switching Applications

The relentless drive towards greater efficiency, reliability, and power density in automotive electronics demands components that meet exceptionally high standards. The Infineon IPD350N06LG stands out as a premier N-channel power MOSFET engineered specifically to address these challenges in the most demanding advanced switching applications.

Designed with the rigorous requirements of the automotive industry in mind, this MOSFET is AEC-Q101 qualified, ensuring its reliability and performance under the harsh conditions typical of automotive environments. Its core is built upon Infineon's advanced OptiMOS™ 6 technology, a platform renowned for delivering best-in-class efficiency. This technology enables the IPD350N06LG to achieve an extremely low typical on-state resistance (R DS(on)) of just 0.35 mΩ at a gate-source voltage of 10 V. This ultralow R DS(on) is critical for minimizing conduction losses, which directly translates into higher efficiency, reduced heat generation, and improved overall system performance.

The device is housed in a SuperSO8 package (PG-TDSON-8), which offers an excellent balance between compact size and superior thermal and electrical characteristics. This package is ideal for space-constrained applications while ensuring effective heat dissipation, allowing the MOSFET to handle high continuous drain currents (I D) up to 350 A. Furthermore, its low gate charge (Q G) and optimized switching characteristics contribute to reduced switching losses, making it exceptionally suitable for high-frequency operation in circuits like DC-DC converters and motor control systems.

Key target applications for the IPD350N06LG include:

Automotive DC-DC Conversion: Both in primary inverters for electric and hybrid vehicles and in secondary low-voltage systems.

Motor Drive Control: Efficiently managing high currents in electric power steering (EPS), braking systems, and other powertrain functions.

Load Switching: Robustly protecting and controlling high-current paths for safety-critical and comfort modules.

ICGOOODFIND: The Infineon IPD350N06LG is a top-tier automotive-grade MOSFET that sets a high benchmark for performance. Its combination of ultralow on-state resistance, high current capability, and robust SuperSO8 packaging, all backed by AEC-Q101 qualification, makes it an indispensable component for engineers designing next-generation, high-efficiency automotive power systems.

Keywords: Automotive MOSFET, OptiMOS™ 6, Low R DS(on), AEC-Q101, SuperSO8 Package.