Infineon BSZ097N10NS5ATMA1 100V N-Channel MOSFET for High-Efficiency Power Conversion

The relentless pursuit of higher efficiency and power density in modern electronics places immense demands on power switching components. At the heart of many advanced power conversion systems, from server SMPS and telecom rectifiers to motor drives and DC-DC converters, lies the power MOSFET. The Infineon BSZ097N10NS5ATMA1 stands out as a premier 100V N-Channel MOSFET engineered specifically to meet these challenges, offering a blend of superior switching performance and robust reliability.

This MOSFET is built on Infineon's advanced OptiMOS™ 5 technology, a platform renowned for its exceptional figure-of-merit (FOM). The key to its high-performance lies in its extremely low gate charge (Qg) and low on-state resistance (RDS(on)). With a maximum RDS(on) of just 9.7 mΩ, power losses during conduction are minimized, leading to cooler operation and higher overall system efficiency. Simultaneously, the low gate charge ensures that switching losses, which become particularly significant at high operating frequencies, are drastically reduced. This allows designers to push switching frequencies higher, enabling the use of smaller passive components like inductors and capacitors, thereby increasing power density.

The device's 100V drain-source voltage rating provides a comfortable safety margin in 48V input bus applications, such as those found in data centers and telecommunications infrastructure, enhancing system robustness and resilience against voltage spikes. Housed in a SuperSO8 package, the BSZ097N10NS5ATMA1 offers an excellent power-to-size ratio. This package not only contributes to a compact footprint but also features an exposed die pad that significantly improves thermal performance by facilitating efficient heat dissipation away from the silicon die.

Furthermore, the MOSFET boasts a low effective output capacitance (Coss(eff)), which is crucial for reducing switching losses in hard-switching topologies like classic buck converters and power factor correction (PFC) stages. Its commitment to reliability is underscored by its high avalanche ruggedness and a body diode with good reverse recovery characteristics, ensuring stable and safe operation under demanding conditions.

ICGOOODFIND: The Infineon BSZ097N10NS5ATMA1 is an exemplary power switch that embodies the progress in semiconductor technology, making it an ideal choice for designers aiming to maximize efficiency and power density in a wide array of high-performance power conversion applications.

Keywords: OptiMOS™ 5 Technology, Low RDS(on), Low Gate Charge (Qg), High-Efficiency Power Conversion, SuperSO8 Package.