Infineon BSC015NE2LS5I OptiMOS 5 Power MOSFET for High-Efficiency Power Conversion

The relentless pursuit of higher efficiency and power density in modern electronic systems places immense demands on power switching components. At the forefront of this innovation is Infineon's BSC015NE2LS5I, a member of the advanced OptiMOS™ 5 family, engineered specifically to set new benchmarks in performance for power conversion applications.

This MOSFET is built on an innovative super-junction technology that drastically reduces key figures of merit. With an ultra-low on-state resistance (R DS(on)) of just 1.5 mΩ maximum, it minimizes conduction losses, allowing more power to be delivered to the load with less energy wasted as heat. This characteristic is paramount in high-current applications such as server and telecom power supplies, where every percentage point of efficiency translates into significant energy savings and reduced cooling requirements.

Furthermore, the device boasts an exceptional switching performance. The OptiMOS™ 5 technology optimizes the gate charge (Q G) and figure-of-merit (FOM), leading to significantly reduced switching losses. This enables systems to operate at higher frequencies, which in turn allows for the use of smaller passive components like inductors and capacitors. The result is a substantial increase in overall power density, enabling designers to create more compact and lighter power solutions without compromising on output or reliability.

The BSC015NE2LS5I is rated for 40 V drain-source voltage, making it an ideal choice for a wide range of use cases, including:

Synchronous rectification in switched-mode power supplies (SMPS)

DC-DC conversion modules for computing and data centers

Motor drive and control circuits

Battery management and protection systems

Its commitment to robustness is underscored by its high avalanche ruggedness and a strong body-diode, ensuring reliable operation under stressful conditions. Packaged in the space-saving SuperSO8, it also offers excellent thermal performance, further enhancing its ability to operate efficiently in thermally constrained environments.

ICGOODFIND: The Infineon BSC015NE2LS5I OptiMOS™ 5 Power MOSFET stands as a superior solution for engineers demanding peak efficiency and high power density. Its industry-leading low R DS(on) and optimized dynamic performance make it a critical component in the next generation of energy-conscious power conversion systems.

Keywords: Power Efficiency, OptiMOS™ 5, Low RDS(on), Power Density, Switching Performance.